Minerda Electronics - 600 V CoolMOS™CFD7SJMOSFET将性能提升到全新水准

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600 V CoolMOS™CFD7SJMOSFET将性能提升到全新水准

Auth:Curtian Date:2018/10/24 Source:英飞凌 Visit:343 Related Key Words: 英飞凌

德国慕尼黑讯-凭借600 V CoolMOS™CFD7,英飞凌科技推出最新的高压超结MOSFET技术。该600 V CoolMOS™CFD7是CoolMOS 7系列的新成员.这款全新MOSFET满足了高功率开关市场对谐振拓扑的需求。它的LLC和ZVS PSFB等软开关拓扑具备业内领先的效率和可靠性.这使其非常适合服务器、 电信设备电源和 电动汽车充电站等高功率SMPs应用.

 

该600 V CoolMOS cdd 7的前身是CoolMOS cdd 2。新MOSFET的效率比它的前身或竞争性产品高出1.45%之多。它不仅拥有快速开关技术的所有优势,还兼具高换相稳固性,同时不影响在设计过程中的轻松部署.该600 V CoolMOS CFD7拥有更低的栅极电荷(QG)和更好的关断性能.此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低69%之多。该600 V CoolMOS CFD7可为THD和SMD器件提供业内领先的解决方案,从而能够支持高功率密度解决方案。

The 600 V CoolMOS CFD7 is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.

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